Invention Grant
- Patent Title: Semiconductor device including vertical channel layer
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Application No.: US15993756Application Date: 2018-05-31
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Publication No.: US10411033B2Publication Date: 2019-09-10
- Inventor: Kwang-soo Kim , Yong-seok Kim , Tae-hun Kim , Min-kyung Bae , Jae-hoon Jang , Kohji Kanamori
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Lee & Morse, P.C.
- Priority: KR10-2017-0078589 20170621
- Main IPC: H01L27/11582
- IPC: H01L27/11582 ; H01L29/08 ; H01L29/78

Abstract:
A semiconductor device includes a plurality of channel structures on a substrate, each channel structure extending in a first direction perpendicular to the substrate, and having a gate insulating layer and a channel layer, a common source extension region including a first semiconductor layer having an n-type conductivity between the substrate and the channel structures, a plurality of gate electrodes on the common source extension region and spaced apart from each other on a sidewall of each of the channel structures in the first direction, and a common source region on the substrate in contact with the common source extension region and including a second semiconductor layer having an n-type conductivity, wherein the gate insulating layer of each of the channel structures extends to cover an upper surface and at least a portion of a bottom surface of the common source extension region.
Public/Granted literature
- US20180374869A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2018-12-27
Information query
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