- 专利标题： Transistors, arrays of transistors, arrays of memory cells individually comprising a capacitor and an elevationally-extending transistor, and methods of forming an array of transistors
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申请号： US15965632申请日： 2018-04-27
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公开(公告)号： US10388658B1公开(公告)日： 2019-08-20
- 发明人: Durai Vishak Nirmal Ramaswamy
- 申请人： Micron Technology, Inc.
- 申请人地址： US ID Boise
- 专利权人： Micron Technology, Inc.
- 当前专利权人： Micron Technology, Inc.
- 当前专利权人地址： US ID Boise
- 代理机构： Wells St. John P.S.
- 主分类号： H01L27/108
- IPC分类号： H01L27/108 ; H01L49/02 ; H01L29/78 ; H01L29/10 ; H01L23/528
摘要：
A transistor comprises semiconductor material that is generally L-shaped or generally mirror L-shaped in at least one straight-line vertical cross-section thereby having an elevationally-extending stem and a base extending horizontally from a lateral side of the stem above a bottom of the stem. The semiconductor material of the stem comprises an upper source/drain region and a channel region there-below. The transistor comprises at least one of (a) and (b), where (a): the semiconductor material of the stem comprises a lower source/drain region below the channel region, and (b): the semiconductor material of the base comprises a lower source/drain region. A gate is operatively laterally adjacent the channel region of the stem. Other embodiments are disclosed, including arrays of memory cells individually comprising a capacitor and an elevationally-extending transistor. Methods are disclosed.
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