Invention Grant
- Patent Title: Nanowire MOSFET with different silicides on source and drain
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Application No.: US14084680Application Date: 2013-11-20
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Publication No.: US10361270B2Publication Date: 2019-07-23
- Inventor: Jean-Pierre Colinge , Cheng-Tung Lin , Kuo-Cheng Ching , Carlos H. Diaz
- Applicant: Taiwan Semiconductor Manufacturing Company Limited
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: McDermott Will & Emery LLP
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L29/41 ; H01L29/66 ; H01L29/78 ; H01L29/775 ; B82Y10/00 ; B82Y40/00 ; H01L29/16 ; H01L21/265
Abstract:
A nanowire field effect transistor (FET) device and method for forming a nanowire FET device are provided. A nanowire FET including a source region and a drain region is formed. The nanowire FET further includes a nanowire that connects the source region and the drain region. A source silicide is formed on the source region, and a drain silicide is formed on the drain region. The source silicide is comprised of a first material that is different from a second material comprising the drain silicide.
Public/Granted literature
- US20150137067A1 NANOWIRE MOSFET WITH DIFFERENT SILICIDES ON SOURCE AND DRAIN Public/Granted day:2015-05-21
Information query
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