Invention Grant
- Patent Title: Organometallic precursors, methods of forming a layer using the same and methods of manufacturing semiconductor devices using the same
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Application No.: US15498945Application Date: 2017-04-27
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Publication No.: US10361118B2Publication Date: 2019-07-23
- Inventor: Chang-Woo Sun , Ji-Eun Yun , Jae-Soon Lim , Youn-Joung Cho , Myong-Woon Kim , Kang-Yong Lee , Sang-Ick Lee , Sung-Woo Cho
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Gyeonggi-do KR Daejon
- Assignee: Samsung Electronics Co., Ltd.,DNF Co. Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.,DNF Co. Ltd.
- Current Assignee Address: KR Gyeonggi-do KR Daejon
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2016-0129937 20161007
- Main IPC: H01L21/768
- IPC: H01L21/768 ; C07F11/00 ; H01L21/285 ; C07F17/00
Abstract:
An organometallic precursor includes tungsten as a central metal and a cyclopentadienyl ligand bonded to the central metal. A first structure including an alkylsilyl group or a second structure including an allyl ligand is bonded to the cyclopentadienyl ligand or bonded to the central metal.
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