Invention Grant
- Patent Title: Current in-rush mitigation for power-up of embedded memories
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Application No.: US15449836Application Date: 2017-03-03
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Publication No.: US10353447B2Publication Date: 2019-07-16
- Inventor: Harmander Singh , Sebastien Weyland , Suresh Kumar Venkumahanti
- Applicant: QUALCOMM Incorporated
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM Incorporated
- Current Assignee: QUALCOMM Incorporated
- Current Assignee Address: US CA San Diego
- Agency: Haynes and Boone, LLP (36340)
- Main IPC: G06F1/26
- IPC: G06F1/26 ; G11C5/14 ; G11C16/20 ; G11C16/30 ; G11C29/02

Abstract:
A programmable logic circuit such as a finite state machine is provided that is configured to determine a memory array power-up sequence from a configuration signal to successively enable each memory array. A delay circuit triggers an initial memory bank in each enabled memory array to power-up without a delay. The delay circuit then counts responsive to a clock to determine a delay between a successive triggering of remaining memory banks in each enabled memory array to power-up.
Public/Granted literature
- US20180253129A1 CURRENT IN-RUSH MITIGATION FOR POWER-UP OF EMBEDDED MEMORIES Public/Granted day:2018-09-06
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