Invention Grant
- Patent Title: Photoresist composition for extreme ultraviolet and method of forming photoresist pattern using the same
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Application No.: US15183541Application Date: 2016-06-15
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Publication No.: US10353290B2Publication Date: 2019-07-16
- Inventor: Cheol Hong Park , Chawon Koh , Hyunwoo Kim , Sang-Yoon Woo , Hyejin Jeon
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do
- Agency: Muir Patent Law, PLLC
- Priority: KR10-2015-0096724 20150707
- Main IPC: G03F7/039
- IPC: G03F7/039 ; G03F7/20 ; G03F7/32 ; H01L21/027 ; G03F7/09 ; G03F7/004 ; G03F7/038 ; G03F7/11
Abstract:
The disclosed embodiments provide a photoresist composition for extreme ultraviolet (EUV) and a method of forming a photoresist pattern using the same. The photoresist composition includes an out-of-band (OOB) absorbing material absorbing light of a wavelength of 100 nm to 300 nm.
Public/Granted literature
- US20170010531A1 PHOTORESIST COMPOSITION FOR EXTREME ULTRAVIOLET AND METHOD OF FORMING PHOTORESIST PATTERN USING THE SAME Public/Granted day:2017-01-12
Information query
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