Invention Grant
- Patent Title: Semiconductor device and manufacturing method thereof
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Application No.: US15444455Application Date: 2017-02-28
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Publication No.: US10332954B2Publication Date: 2019-06-25
- Inventor: Jung Hun Choi , Young Tak Kim , Da Il Eom , Sun Jung Lee
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Lee & Morse, P.C.
- Priority: KR10-2016-0066897 20160531
- Main IPC: H01L49/02
- IPC: H01L49/02 ; H01L27/06 ; H01L29/78

Abstract:
A semiconductor device and a manufacturing method thereof, the semiconductor device including an insulation layer; a metal resistance pattern on the insulation layer; a spacer on a side wall of the metal resistance pattern; and a gate contact spaced apart from the spacer, the gate contact extending into the insulation layer, wherein the insulation layer includes a projection projecting therefrom, the projection contacting the gate contact.
Public/Granted literature
- US20170345884A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF Public/Granted day:2017-11-30
Information query
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