- 专利标题： Contact plugs and methods of forming same
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申请号： US15801154申请日： 2017-11-01
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公开(公告)号： US10269624B2公开(公告)日： 2019-04-23
- 发明人: Xi-Zong Chen , Y. H. Kuo , Cha-Hsin Chao , Yi-Wei Chiu , Li-Te Hsu
- 申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 申请人地址： TW Hsinchu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsinchu
- 代理机构： Slater Matsil, LLP
- 主分类号： H01L21/768
- IPC分类号： H01L21/768 ; H01L21/033 ; H01L21/28 ; H01L23/538 ; H01L27/088 ; H01L29/417 ; H01L21/027
摘要：
An embodiment method includes patterning an opening through a dielectric layer, depositing an adhesion layer along sidewalls and a bottom surface of the opening, depositing a first mask layer in the opening over the adhesion layer, etching back the first mask layer below a top surface of the dielectric layer, and widening an upper portion of the opening after etching back the first mask layer. The first mask layer masks a bottom portion of the opening while widening the upper portion of the opening. The method further includes removing the first mask layer after widening the upper portion of the opening and after removing the first mask layer, forming a contact in the opening by depositing a conductive material in the opening over the adhesion layer.
公开/授权文献
- US20190035679A1 CONTACT PLUGS AND METHODS OF FORMING SAME 公开/授权日：2019-01-31
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