In some embodiments a method of depositing a metal-containing layer atop a substrate disposed in a physical vapor deposition (PVD) chamber includes: providing a plasma forming gas to a processing region of the PVD chamber; providing a first amount of RF power to a target assembly disposed opposite the substrate to form a plasma within the processing region of the PVD chamber; sputtering source material from the target assembly to deposit a metal-containing layer onto the substrate, wherein the source material is at a first erosion state; and tuning an auto capacitance tuner coupled to a substrate support while sputtering source material to maintain an ion energy at a surface of the substrate within a predetermined range as the target erodes from the first erosion state to a second erosion state.