Invention Grant
- Patent Title: Interconnect structures and methods of forming same
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Application No.: US15942692Application Date: 2018-04-02
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Publication No.: US10262964B2Publication Date: 2019-04-16
- Inventor: Wen-Hsiung Lu , Hsuan-Ting Kuo , Tsung-Yuan Yu , Hsien-Wei Chen , Ming-Da Cheng , Chung-Shi Liu
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater Matsil, LLP
- Main IPC: H01L23/00
- IPC: H01L23/00 ; H01L23/29 ; H01L21/56 ; H01L23/31 ; H01L23/532 ; H01L23/525 ; H01L21/768

Abstract:
Embodiments of the present disclosure include interconnect structures and methods of forming interconnect structures. An embodiment is an interconnect structure including a post-passivation interconnect (PPI) over a first substrate and a conductive connector on the PPI. The interconnect structure further includes a molding compound on a top surface of the PPI and surrounding a portion of the conductive connector, a top surface of the molding compound adjoining the conductive connector at an angle from about 10 degrees to about 60 degrees relative to a plane parallel with a major surface of the first substrate, the conductive connector having a first width at the adjoining top surface of the molding compound, and a second substrate over the conductive connector, the second substrate being mounted to the conductive connector.
Public/Granted literature
- US20180226373A1 Interconnect Structures and Methods of Forming Same Public/Granted day:2018-08-09
Information query
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