- 专利标题： Two step method of rapid curing a semiconductor polymer layer
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申请号： US14876258申请日： 2015-10-06
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公开(公告)号： US10204803B2公开(公告)日： 2019-02-12
- 发明人: William Boyd Rogers , Willibrordus Gerardus Maria van den Hoek
- 申请人： DECA Technologies Inc.
- 申请人地址： US AZ Tempe
- 专利权人： Deca Technologies Inc.
- 当前专利权人： Deca Technologies Inc.
- 当前专利权人地址： US AZ Tempe
- 代理机构： Booth Udall Fuller, PLC
- 主分类号： H01L21/768
- IPC分类号： H01L21/768 ; H01L21/56 ; H01L21/3105 ; H01L23/00 ; H01L23/31
摘要：
A semiconductor device and method of making the semiconductor device is described. A semiconductor die can be provided. A polymer layer can be formed over the semiconductor die. A via can be formed in the polymer layer. The polymer layer can be cross-linked in a first process, after forming the via, by exposing the polymer layer to ultraviolet (UV) radiation to form a sidewall of the via with via sidewall slope greater than or equal to 45 degrees and to further form a cross-linked via sidewall surface. The polymer layer can be thermally cured in a second process after the first process, wherein a maximum ramp-up rate from room temperature to a peak temperature of the second process is greater than 10 degrees Celsius per minute.
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