Invention Grant
- Patent Title: Silicon carbide single crystal, silicon carbide single crystal wafer, silicon carbide single crystal epitaxial wafer, and electronic device
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Application No.: US15748274Application Date: 2016-08-25
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Publication No.: US10181517B2Publication Date: 2019-01-15
- Inventor: Takeshi Okamoto , Hiroyuki Kondo , Takashi Kanemura , Shinichiro Miyahara , Yasuhiro Ebihara , Shoichi Onda , Hidekazu Tsuchida , Isaho Kamata , Ryohei Tanuma
- Applicant: DENSO CORPORATION
- Applicant Address: JP Kariya
- Assignee: DENSO CORPORATION
- Current Assignee: DENSO CORPORATION
- Current Assignee Address: JP Kariya
- Agency: Posz Law Group, PLC
- Priority: JP2015-170814 20150831
- International Application: PCT/JP2016/074724 WO 20160825
- International Announcement: WO2017/038591 WO 20170309
- Main IPC: C23C16/32
- IPC: C23C16/32 ; C30B29/36 ; H01L29/04 ; H01L29/16 ; H01L21/02 ; H01L29/32 ; H01L29/66 ; H01L29/94 ; C30B25/18
Abstract:
A silicon carbide single crystal includes: threading dislocations each of which having a dislocation line extending through a C-plane, and a Burgers vector including at least a component in a C-axis direction. In addition, a density of the threading dislocations having angles, each of which is formed by an orientation of the Burgers vector and an orientation of the dislocation line, larger than 0° and within 40° is set to 300 dislocations/cm2 or less. Furthermore, a density of the threading dislocations having the angles larger than 40° is set to 30 dislocations/cm2 or less.
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