A sputtering target containing 0.01 to 0.5 wt % of Ag, and remainder being W and unavoidable impurities. The object of the present invention is to provide a sputtering target capable of forming a film having a relatively low specific resistance by sputtering, wherein the obtained film is endowed with good uniformity, and in particular the sputtering target has superior characteristics upon forming thin films for semiconductor devices, as well as to provide a method for producing the foregoing sputtering target.