- 专利标题： Method of forming a semiconductor device and structure therefor
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申请号： US15188285申请日： 2016-06-21
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公开(公告)号： US10147790B2公开(公告)日： 2018-12-04
- 发明人: Gordon M. Grivna
- 申请人： SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- 申请人地址： US AZ Phoenix
- 专利权人： SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- 当前专利权人： SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- 当前专利权人地址： US AZ Phoenix
- 代理商 Robert F. Hightower
- 主分类号： H01L29/06
- IPC分类号： H01L29/06 ; H01L29/872 ; H01L29/66 ; H01L29/78 ; H01L29/861
摘要：
An embodiment of a semiconductor device includes forming an active region that extends vertically into the semiconductor material in which the semiconductor device is formed. The active region may include a P-N junction or alternately a gate or a channel region of an MOS transistor.
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