Invention Grant
- Patent Title: Field effect transistor using transition metal dichalcogenide and a method for manufacturing the same
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Application No.: US15333442Application Date: 2016-10-25
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Publication No.: US10141412B2Publication Date: 2018-11-27
- Inventor: Yuh-Renn Wu , Chi-Wen Liu , Shou-Fang Chen
- Applicant: National Taiwan University , TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW Hsinchu TW Taipei
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.,NATIONAL TAIWAN UNIVERSITY
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.,NATIONAL TAIWAN UNIVERSITY
- Current Assignee Address: TW Hsinchu TW Taipei
- Agency: McDermott Will & Emery LLP
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L29/772 ; H01L29/24 ; H01L29/04 ; H01L29/10 ; H01L29/417 ; H01L29/423 ; H01L29/66 ; H01L29/786
Abstract:
A field effect transistor (FET) includes a gate dielectric layer, a two-dimensional (2D) channel layer formed on the gate dielectric layer and a gate electrode. The 2D channel layer includes a body region having a first side and a second side opposite to the first side, the body region being a channel of the FET. The 2D channel layer further includes first finger regions each protruding from the first side of the body region and second finger regions each protruding from the second side of the body region. A source electrode covers the first finger regions, and a drain electrode covers the second finger regions.
Public/Granted literature
- US20180114839A1 FIELD EFFECT TRANSISTOR USING TRANSITION METAL DICHALCOGENIDE AND A METHOD FOR MANUFACTURING THE SAME Public/Granted day:2018-04-26
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