- 专利标题： Method of cleaning wafer after CMP
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申请号： US15395057申请日： 2016-12-30
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公开(公告)号： US10109523B2公开(公告)日： 2018-10-23
- 发明人: Chien-Hao Chung , Chang-Sheng Lin , Kuo-Feng Huang , Li-Chieh Wu , Chun-Chieh Lin
- 申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 代理机构： Slater Matsil, LLP
- 主分类号： H01L23/48
- IPC分类号： H01L23/48 ; H01L21/768 ; H01L23/535
摘要：
A method includes forming a first dielectric layer over a wafer, etching the first dielectric layer to form an opening, filling a tungsten-containing material into the opening, and performing a Chemical Mechanical Polish (CMP) on the wafer. After the CMP, a cleaning is performed on the wafer using a weak base solution.
公开/授权文献
- US20180151427A1 Method of Cleaning Wafer After CMP 公开/授权日：2018-05-31
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