- 专利标题： Semiconductor device having barrier layer to prevent impurity diffusion
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申请号： US15651751申请日： 2017-07-17
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公开(公告)号： US10096672B2公开(公告)日： 2018-10-09
- 发明人: I-Chih Chen , Chih-Mu Huang , Fu-Tsun Tsai , Meng-Yi Wu , Yung-Fa Lee , Ying-Lang Wang
- 申请人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- 申请人地址： TW Hsinchu
- 专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- 当前专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- 当前专利权人地址： TW Hsinchu
- 代理机构： McDermott Will & Emery LLP
- 主分类号： H01L21/425
- IPC分类号： H01L21/425 ; H01L21/02 ; H01L29/06 ; H01L29/78
摘要：
A semiconductor device includes a semiconductor substrate having a first conductivity type region including a first conductivity type impurity. A first gate structure is on the semiconductor substrate overlying the first conductivity type region. A second conductivity type region including a second conductivity type impurity is formed in the semiconductor substrate. A barrier layer is located between the first conductivity type region and the second conductivity type region. The barrier layer prevents diffusion of the second conductivity type impurity from the second conductivity type region into the first conductivity type region.
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