Invention Grant
- Patent Title: Semiconductor structure for preventing row hammering issue in DRAM cell and method for manufacturing the same
-
Application No.: US15627455Application Date: 2017-06-20
-
Publication No.: US10043811B1Publication Date: 2018-08-07
- Inventor: Chih-Chieh Tsai , Pin-Hong Chen , Tzu-Chieh Chen , Tsun-Min Cheng , Yi-Wei Chen , Hsin-Fu Huang , Chi-Mao Hsu , Shih-Fang Tzou
- Applicant: UNITED MICROELECTRONICS CORP. , Fujian Jinhua Integrated Circuit Co., Ltd.
- Applicant Address: TW Hsin-Chu CN Quanzhou, Fujian province
- Assignee: UNITED MICROELECTRONICS CORP.,Fujian Jinhua Integrated Circuit Co., Ltd.
- Current Assignee: UNITED MICROELECTRONICS CORP.,Fujian Jinhua Integrated Circuit Co., Ltd.
- Current Assignee Address: TW Hsin-Chu CN Quanzhou, Fujian province
- Agent Winston Hsu
- Priority: CN201710351696 20170518
- Main IPC: H01L27/108
- IPC: H01L27/108
Abstract:
A semiconductor structure for preventing row hammering issue in DRAM cell is provided in the present invention. The structure includes a trench with a gate dielectric, an n-type work function metal layer, a TiN layer conformally formed within, and a buried word line filled in the trench.
Information query
IPC分类:
