- 专利标题: Integrated circuitry and methods of forming transistors
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申请号: US15357602申请日: 2016-11-21
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公开(公告)号: US10020228B2公开(公告)日: 2018-07-10
- 发明人: Michael A. Smith
- 申请人: Micron Technology, Inc.
- 申请人地址: US ID Boise
- 专利权人: Micron Technology, Inc.
- 当前专利权人: Micron Technology, Inc.
- 当前专利权人地址: US ID Boise
- 代理机构: Wells St. John P.S.
- 主分类号: H01L21/8234
- IPC分类号: H01L21/8234 ; H01L27/092 ; H01L27/088 ; H01L27/085 ; H01L27/06 ; H01L29/78 ; H01L21/265 ; H01L29/66 ; H01L27/02 ; H01L29/06 ; H01L21/8238 ; H01L27/11526 ; H01L27/11573 ; H01L29/08 ; H01L29/788 ; H01L29/792 ; H01L27/11529 ; H01L27/11531
摘要:
Some embodiments include integrated circuits having first and second transistors. The first transistor is wider than the second transistor. The first and second transistors have first and second active regions, respectively. Dielectric features are associated with the first active region and break up the first active region. The second active region is not broken up to the same extent as the first active region. Some embodiments include methods of forming transistors. Active areas of first and second transistors are formed. The active area of the first transistor is wider than the active area of the second transistor. Dielectric features are formed in the active area of the first transistor. The active area of the first transistor is broken up to a different extent than the active area of the second transistor. The active areas of the first and second transistors are simultaneously doped.
公开/授权文献
- US20170069538A1 Integrated Circuitry and Methods of Forming Transistors 公开/授权日:2017-03-09
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