The utility model discloses an LDMOS microwave power device housing based on DBC (Direct Bond Copper) technology, relating to the technical field of packaging semiconductors and other solid devices. The housing comprises a metal heat sink, a ceramic side wall formed on the upper surface of the metal heat sink through sintering by adopting the DBC technology, and a lead-out terminal formed on the upper surface of the metal side wall through sintering by adopting the DBC technology. The metal heat sink and the lead-out terminal are made of coalesced copper. According to the utility model, the metal heat sink and the lead-out terminal which are made of coalesced copper enable the housing to have higher thermal conductivity, so that the housing has lower thermal resistance and better heat dissipation performance, and is simpler in production and lower in cost.