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实用新型
CN204011391U 氮化铝热沉硅双极功率器件外壳 失效 - 权利终止

氮化铝热沉硅双极功率器件外壳
摘要：
本实用新型公开了一种氮化铝热沉硅双极功率器件外壳，涉及半导体或其他固态器件的封装技术领域。包括金属底盘、氧化铝陶瓷侧墙、氮化铝陶瓷热沉以及金属引线，所述氧化铝陶瓷侧墙固定在所述金属底盘的上表面，金属底盘与氧化铝陶瓷侧墙之间构成腔体结构，所述氮化铝陶瓷热沉固定在所述腔体结构内部的金属底盘的上表面，所述金属引线固定在所述氧化铝陶瓷侧墙上。所述功率器件外壳使用氮化铝替代氧化铍，无毒无害，成本低，且环保；在现有结构基础上将氧化铝陶瓷侧墙加厚，将氮化铝陶瓷热沉放置在氧化铝陶瓷侧墙和金属底盘之间形成的腔体内，不会出现陶瓷瓷裂，引起外壳气密性失效，器件性能稳定。
摘要（英）：

The utility model discloses an aluminium-nitride heat-sink silicon bipolar power device housing, relating to the technical field of packaging semi-conductor or other solid-state devices. The power device housing comprises a metal base, an alumina ceramic side wall, an aluminium nitride ceramic heat sink and a metal lead. The alumina ceramic side wall is fixed to the upper surface of the metal base. A chamber structure is formed between the metal base and the alumina ceramic side wall. The aluminium nitride ceramic heat sink is fixed to the upper surface of the metal base inside the chamber structure. The metal lead is fixed to the alumina ceramic side wall. The power device housing adopts aluminium nitride instead of beryllia, thereby being non-toxic, innocuous, cheap and environment friendly. The alumina ceramic side wall is thickened on the basis of the conventional structure, and the aluminium nitride ceramic heat sink is disposed in the chamber formed between the alumina ceramic side wall and the metal base, so that ceramic cleft, which causes airtightness failure of the housing, is prevented, and the performance of the device is stable.

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