The invention deals with the domain of the semiconductor chiseling and eroding. The invention discloses the method of controlling the temperature of the wafer during the course of chiseling and eroding the semiconductor. The process of the invention is showed below: the corresponding relation between the temperature of the cavity and the temperature controlling machine is gained on the base of the testing, videlicet, when the temperature of the cavity hoists, the corresponding needing of the temperature of the temperature controlling to keep the temperature of the silicon the normal range. These corresponding relations are reserved in one database, during the process, according to the changing of the temperature of the cavity, the database is find to adjust the temperature of the temperature controlling machine real-timely, so the temperature of the silicon is controlled; because of adopting the said technical project, the system can lookup the database real-timely to adjusting the temperature of the temperature of the temperature controlling setting according to the changing of the temperature of the active cavity, so the temperature of the silicon can be controlled above the normal value to improve the effect of the chiseling and the eroding of the wafer.