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发明公开
CN1749448A 液体涂抹法区熔硅单晶的掺锗方法 失效 - 权利终止

液体涂抹法区熔硅单晶的掺锗方法
摘要：
本发明涉及一种液体涂抹法区熔硅单晶的掺锗方法。它是使用含锗元素的盐酸溶液涂抹在硅单晶的表面，烘干后装到区熔炉上，按通常的区熔工艺进行区熔熔炼或生长单晶。本发明是理想的掺锗方法，不但使锗掺得进去，而且锗在硅中的浓度均匀可控，掺锗工艺无沾污，保证了硅单晶的质量。
摘要（英）：

The present invention relates to liquid smearing process of doping germanium to zone melting silicon monocrystal. Hydrochloric acid solution containing germanium element is smeared to the surface of silicon monocrystal, and after stoving, the silicon monocrystal is loaded into zone melting furnace for zone melting or monocrystal growth in conventional process. The process as one ideal germanium doping has controllable germanium concentration in silicon, no contamination and high silicon monocrystal quality.

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