The magnetically controlled sputtering target with raised target material utilization is one planar or cylindrical structure comprising water cooled target material and movable magnet. The planer target structure has magnet installed together with the water cooling board via rolling bearing and motor to drive the metal board and the magnet on it via driving disc; and the cylindrical structure has magnet around one stainless steel pipe, installed inside the cylindrical target, set inside cooling water and connected with motor via connecting mechanism. The present invention has improved structure and movable magnet to obtain wide target material etching area, homogeneous etching and obviously raised target material utilization while maintaining the merits of magnetically controlled sputtering technique.