The method includes following steps. Before the metal thin-film capacitor being formed, using the manufacturing procedure of the copper metal mosaic produces the inner connection wire. The first metal layer, the insulation layer and the second metal layer are deposited and defined by etching to form the capacitor and the lead. Then, the second etching is carried out for the second metal layer in order to divest the residual second metal layer on the lead. The copper metal mosaic manufacturing procedure is continuou s to be used to make the inner connection wire. Also, the mosaic structuer of the metal capacitor is provided. The invention possesses the advantages of lowering the cost for manufacturing IC containing capacitors, easy to control the manufacturing procedure and providing the better electrical specification.