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CN1213177C 用于制造至少一种SIC单晶体的装置和方法 失效 - 权利终止 转让

用于制造至少一种SIC单晶体的装置和方法
摘要：
用于制造一种碳化硅(SiC)单晶体(10)的装置具有一个坩埚(20)，它包括一个用于容纳固态SiC贮存物(31)的贮存区(30)和一个用于容纳SiC晶核(11)的结晶区(12)。在坩埚(20)内设有一个由玻璃碳制成的部件(51)。在用于制造一种碳化硅(SiC)单晶体(10)的方法中，通过加热贮存物(31)，使固态SiC升华并形成气相SiC。气相SiC被输往SiC晶核(11)并在那里生长成SiC单晶体(10)。通过由玻璃碳制成的部件(51)，可对热量流(61)进行控制。
摘要（英）：

A device for producing a silicon carbide (SiC) single crystal contains a crucible having a storage region for holding a stock of solid SiC and having a crystal region for holding a SiC seed crystal. An insert made from glassy carbon is disposed in the crucible. In the method, solid SiC is sublimed as a result of the stock being heated and SiC in the gas phase is generated, which is conveyed to the SiC seed crystal, on which it grows as an SiC single crystal. A heat flux is controlled by an insert made from glassy carbon.

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