The invention provides a subthreshold reference voltage generation circuit with ultra-low power consumption, low voltage and low temperature drift. The subthreshold reference voltage generation circuit belongs to the technical field of power management, and comprises a starting circuit, a current reference circuit, a VPTAT circuit and a VCTAT circuit. The purpose of the starting circuit is to prevent the situation of zero-current transmission. After the circuit operates normally, a core structure of current reference is utilized to generate a nanoampere-level reference current at first, wherein the core structure comprises a high-threshold MOS tube and a low-threshold MOS tube, and a current mirror is utilized to provide bias for the VPTAT circuit and the VCTAT circuit. A voltage with a negative temperature coefficient is generated by utilizing a gate-to-source voltage difference of the MOS tubes with different threshold voltages, and a voltage with a positive temperature coefficient is generated by utilizing a gate-to-source voltage difference of the MOS tubes with identical threshold voltages. The two voltages with the different temperature coefficients are superposed and compensated with each other to generate a reference voltage. The subthreshold reference voltage generation circuit can complete low-voltage output and low-temperature-drift design indexes under the premise of achieving the ultra-low power consumption and decreasing the layout area.