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发明公开
CN110364594A 一种氮化镓或氮化铝纳米孔的制备方法 失效 - 权利终止

一种氮化镓或氮化铝纳米孔的制备方法
摘要：
本发明提供一种氮化镓或氮化铝纳米孔的制备方法，包括以下步骤：在蓝宝石衬底上依次进行（1）GaN或AlN薄膜层的生长；（2）SiO2薄膜层的沉积；（3）Ni薄膜层的沉积并进行Ni薄膜层的退火处理，在Ni薄膜层的退火过程中，Ni薄膜自组装形成离散Ni颗粒；（4）SiO2薄膜层的刻蚀：以步骤（3）自组装形成的Ni颗粒为掩膜，刻蚀SiO2薄膜层，直至刻蚀面抵达GaN或AlN薄膜层；（5）Ni颗粒的腐蚀：腐蚀去除Ni颗粒后，GaN或AlN薄膜层上留下SiO2纳米柱；（6）GaN或AlN薄膜层的继续生长：GaN或AlN薄膜层继续外延生长且GaN或AlN薄膜层继续生长后的高度不高于SiO2纳米柱的高度；（7）SiO2纳米柱的腐蚀：腐蚀除去SiO2纳米柱，即得GaN或AlN纳米孔。本发明形成的纳米孔的界面要好，缺陷少。
摘要（英）：

The invention provides a preparation method of gallium nitride or aluminum nitride nanopores, which comprises the steps of (1) sequentially growing a GaN or AlN thin film layer on a sapphire substrate; (2) depositing a SiO2 thin film layer; (3) depositing a Ni thin film layer, and annealing the Ni thin film layer, wherein the Ni thin film is self-assembled to form discrete Ni particles during theannealing process of the Ni thin film layer; (4) etching the SiO2 thin film layer, that is, etching the SiO2 thin film layer by taking the Ni particles formed by the self-assembly in the step (3) as amask until the etching surface reaches the GaN or AlN thin film layer; (5) corroding the Ni particles, that is, leaving SiO2 nano-columns on the GaN or AlN thin film layer after removing the Ni particles by corrosion; (6) continuously growing the GaN or AlN thin film layer, wherein the GaN or AlN thin film continues to grow in an epitaxial mode, and the height of the GaN or AlN thin film layer after continuing to grow is not greater than the height of the SiO2 nano-columns; and (7) corroding the SiO2 nano-columns, that is, removing the SiO2 nano-columns by corrosion to obtain the GaN or AlN nanopores. The nanopores formed according to the invention have the advantages of good interface and few defects.

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