The embodiment of the invention discloses a manufacturing method of a temperature detection device. Through directly forming a bonding layer on a temperature sensing element of the temperature detection device, and based on a CIS (CMOS Image Sensor) bonding thinning process platform, a signal reading chip is bonded with a temperature sensing chip through the bonding layer by using a mixed bondingprocess and a substrate is thinned so that a manufacturing technology of the temperature detection device can be simplified, a product yield rate is increased, cost is reduced and batch production isrealized.