The invention discloses an asymmetric micro-cavity edge emitting semiconductor laser array, and belongs to the technical field of semiconductor lasers. An existing semiconductor laser stack array faces multiple technical problems in beam shaping and output coupling. According to the asymmetric micro-cavity edge emitting semiconductor laser array, laser single tubes forming the laser array are asymmetric micro-cavity edge emitting semiconductor lasers; a front row of laser linear arrays and a back row of laser linear arrays are located on the same substrate; in the front row of the laser lineararrays, the 3-4 laser single tubes are linearly arranged according to the same geometric center distance; in the back row of the laser linear arrays, the 2-4 laser single tubes are linearly arrangedaccording to the same geometric center distance; the geometric center distance of each laser single tube in the front row of the laser linear arrays is the same as the geometric center distance of each laser single tube in the back row of the laser linear arrays; the laser single tubes are same in light-emitting direction, and are forward; and an optical axis of light emitted by each laser singletube in the back row of the laser linear arrays is away from the geometric center of the closest laser single tube in the front row of the laser linear arrays for 1/2 of the geometric center distance.