The present invention relates to a power rail and MOL constructs for FDSOI. An electrical connection is provided between a source/drain of a planar transistor and a local interconnect or first metallization layer power rail, includes a first contact area electrically coupled to the source/drain, a second contact area electrically coupled to the first contact area and a gate of the transistor, anda V0 electrically coupled to the local interconnect or first metallization layer power rail. Trench silicide is absent from the transistor. A contact area-based power rail spine is also provided including a first contact area, a second contact area and adjacent V0 bi-directional staple both over and electrically coupled to the first contact area, and a V0 over and electrically coupled to the second contact area and the V0 bi-directional staple.