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发明公开
CN108004522A 一种等离子体增强原子层沉积碳化镍薄膜的设备及方法 无效 - 驳回

一种等离子体增强原子层沉积碳化镍薄膜的设备及方法
摘要：
本发明公开了一种等离子体增强原子层沉积碳化镍薄膜的设备及方法，包括有载气瓶、氢气瓶、AMD-Ni单体瓶、DAD-Ni单体瓶、加热炉、机械泵和射频电源，将AMD-Ni单体瓶和DAD-Ni单体瓶放在加热套内，加热套内壁缠上加热带，在加热炉内设有反应腔，反应腔内放有基片台，基片台内置有热电偶，所述的载气瓶的出气口分别连接质量流量控制器一、流量控制器二、流量控制器三，流量控制器一的出口依次连接ALD阀一和AMD-Ni单体瓶的进口，流量控制器二的出口依次连接ALD阀二和DAD-Ni单体瓶的进口、流量控制器三的出口依次连接ALD阀三和三通阀的一口。
摘要（英）：

The invention discloses a device and method for plasma enhanced atomic layer deposition of a nickel carbide film. A carrier gas cylinder, a hydrogen cylinder, an AMD-Ni monomer cylinder, a DAD-Ni monomer cylinder, a heating furnace, a mechanical pump and a radio frequency power source; the AMD-Ni monomer cylinder and the DAD-Ni monomer cylinder are placed in a heating sleeve; a heating strip is wound on the inner wall of the heating sleeve; a reaction cavity is arranged in the heating furnace; a substrate table is placed in the reaction cavity, and is internally provided with a thermocouple; agas outlet of the carrier gas bottle is connected with a mass flow controller I, a flow controller II and a flow controller III; an outlet of the flow controller I is sequentially connected with an ALD valve I and an inlet of the AMD-Ni monomer cylinder; an outlet of the flow controller II is sequentially connected with an ALD valve II and an inlet of the DAD-Ni monomer cylinder; and an outlet ofthe flow controller III is sequentially connected with an ALD valve III and a port I of a three-way valve.

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