The invention discloses a method for identifying a carbon/silicon surface of a silicon carbide wafer. The method comprises the following steps: performing flat grinding and rolling processing on a grown silicon carbide crystal ingot; orienting the rolled crystal ingot, and determining the direction of a reference axis as <11-20> direction; processing asymmetric V-shaped slots along the <11-20> direction; processing the crystal ingot to obtain a wafer, wherein the V-shaped slots of the processed wafer form an angle theta; the two sides forming the angle theta are set as a and b respectively, and the lengths of the two sides meet a condition that a is not equal to b; corresponding wafer surface can be judged to be a carbon surface or a silicon surface according to whether the two sides meeta condition that a is less than b or a is greater than b. According to the method disclosed by the invention, the wafer damage is reduced, the effective usable area of the wafer is increased, the costis lowered, and judgment of the carbon/silicon surface of the wafer is realized efficiently; meanwhile, original large locating edge of the wafer can be saved, and the crystal defects caused by regrowth can be reduced, thereby improving the crystal quality.