The invention discloses a production method of a multi-layered silicon wafer for MEMS (Micro-electromechanical System) devices. The multi-layered silicon wafer is of a three-layered structure which consists of a back damage layer, a heavily doped low-resistance device layer and a high-resistance supporting layer. The production method comprises the following steps: (1) the back of a heavily dopedchemically etched low-resistance silicon wafer undergoes damage treatment, so that the back damage layer is produced; (2) the front of the heavily doped chemically etched low-resistance silicon waferis polished; (3) the polished front of the heavily doped chemically etched low-resistance silicon wafer is directly bonded with another high-resistance polished silicon wafer; (4) after bonding, heattreatment is performed. Since the back undergoes damage treatment, the lattice of a local area of the silicon wafer becomes incomplete, a stress field, stress concentration points and the dislocationof the back-damaged wafer induced in heat treatment can absorb and deposit harmful impurities in a device area, so that a certain range of clean area is formed on the device layer, and therefore the number of bonded interface defects caused by the harmful impurities of the device layer can be reduced to a certain extent.