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发明公开
CN107946357A 具有低米勒电容的IGBT器件 审中-实审

具有低米勒电容的IGBT器件
摘要：
本发明涉及一种具有低米勒电容的IGBT器件，其元胞结构包括第二导电类型体区、第一导电类型源区以及栅极多晶硅体，栅极多晶硅体包括屏蔽栅以及控制栅，控制栅、屏蔽栅分别通过控制栅氧化层、屏蔽栅氧化层与第一导电类型外延层间隔；所述控制栅与下方的第二导电类型体区、第一导电类型源区交叠，屏蔽栅位于第二类型体区之间；在所述第一导电类型外延层上方还设置发射极金属，所述发射极金属与第二导电类型体区、第一导电类型源区以及屏蔽栅欧姆接触，且发射极金属通过绝缘介质层与控制栅绝缘隔离。本发明结构紧凑，能有效降低IGBT器件的米勒电容，提高IGBT开关速度，从而降低IGBT器件的功耗，安全可靠。
摘要（英）：

The invention relates to an IGBT device having low Miller capacitance. A cell structure comprises second conductive type body areas, first conductive type source areas and a grid polysilicon body. Thegrid polysilicon body comprises a shield grid and control grids. The control grids and the shield grid are isolated with a first conductive type epitaxial layer through control grid oxidation layersand a shield grid oxidation layer respectively. The control grids are overlapped with the second conductive type body areas and the first conductive type source areas below; and the shield grid is arranged between the second conductive type body areas. Emitter metal is arranged above the first conductive type epitaxial layer. The emitter metal is in ohmic contact with the second conductive type body areas, the first conductive type source areas and the shield grid; and the emitter metal is insulated and isolated from the control grids through an insulation dielectric layer. The IGBT device iscompact in structure; Miller capacitance of the IGBT device can be reduced effectively; switching speed of the IGBT is improved; power consumption of the IGBT device is reduced; and the IGBT device issafe and reliable.

IPC分类:
H 电学
H01 基本电气元件
H01L 半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L29/00 专门适用于整流、放大、振荡或切换，并具有至少一个电位跃变势垒或表面势垒的半导体器件；具有至少一个电位跃变势垒或表面势垒，例如PN结耗尽层或载流子集结层的电容器或电阻器；半导体本体或其电极的零部件（H01L31/00至H01L47/00，H01L51/05优先；除半导体或其电极之外的零部件入H01L23/00；由在一个共用衬底内或其上形成的多个固态组件组成的器件入H01L27/00）
H01L29/66 .按半导体器件的类型区分的
H01L29/68 ..只能通过对一个不通有待整流、放大或切换的电流的电极供给电流或施加电位方可进行控制的（H01L29/96优先）
H01L29/70 ...双极器件
H01L29/72 ....晶体管型器件，如连续响应于所施加的控制信号的
H01L29/739 .....受场效应控制的
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