A substrate processing method includes a substrate maintaining step of maintaining a substrate horizontal; a liquid film forming step of forming a liquid film of a low surface tension liquid by supplying the upper surface of the substrate maintained horizontal with the low surface tension liquid having surface tension lower than surface tension of water; an opening-forming step of forming an opening in the center region of the liquid film; a liquid film removal step of removing the liquid film from the upper surface of the substrate by widening the opening; a low surface tension liquid supplystep of supplying a low surface tension liquid having surface tension lower than surface tension of water toward a first liquid landing point which is set on the outside of the opening; a hydrophobicagent supply step of supplying a hydrophobic agent toward a second liquid landing point which is set on the outside of the opening and further from the opening than the first liquid landing point, with the hydrophobic agent allowing the upper surface of the substrate maintained horizontal to be hydrophobic; and a liquid landing point moving step of moving the first liquid landing point and the second liquid landing point so as to follow widening of the opening.