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发明公开
CN107256853A 钝化后互连结构及其形成方法 无效 - 驳回

钝化后互连结构及其形成方法
摘要：
一种半导体器件包括：导电层，该导电层通过浸镀锡工艺形成于钝化后互连(PPI)结构的表面上；聚合物层，该聚合物层形成于导电层上并且经图案化具有暴露出一部分导电层的开口；以及焊料凸块，该焊料凸块形成于聚合物层的开口中以电连接至PPI结构。本发明提供了钝化后互连结构及其形成方法。
摘要（英）：

A semiconductor device includes a conductive layer formed on the surface of a post-passivation interconnect (PPI) structure by an immersion tin process. A polymer layer is formed on the conductive layer and patterned with an opening to expose a portion of the conductive layer. A solder bump is then formed in the opening of the polymer layer to electrically connect to the PPI structure. The invention provides a post-passivation interconnect structure and a method of forming the same.

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