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发明公开
CN107046039A 包括高电子迁移率晶体管的半导体器件结构及其形成方法 无效 - 撤回

包括高电子迁移率晶体管的半导体器件结构及其形成方法
摘要：
本发明实施例提供了一种半导体器件，包括衬底和高电子迁移率晶体管(HEMT)。形成有凹槽的衬底。HEMT的至少部分设置在凹槽中。也公开了一种用于制造半导体器件的方法。也公开了一种使用半导体器件的射频(RF)前端模块。本发明实施例涉及包括高电子迁移率晶体管的半导体器件结构及其形成方法。
摘要（英）：

The invention provides a semiconductor device. The semiconductor device comprises a substrate and a high-electron-mobility transistor (HEMT). The substrate is formed with a recess. At least a portion of the HEMT is disposed in the recess. A method for manufacturing the semiconductor device is also disclosed. A radio frequency (RF) front-end module that employs the semiconductor device is also disclosed. The invention relates to the secmidoncutor device structure including the high-electron-mobility transistor (hemt) and the method for manufacturing the same.

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