知搜-全球专利检索

  1. 登录
  2. 注册
发明公开
CN107002284A 13族元素氮化物层的分离方法及复合基板 有权

13族元素氮化物层的分离方法及复合基板
摘要：
准备出包括蓝宝石基板和设置在该蓝宝石基板上的13族元素氮化物层的复合基板。13族元素氮化物层由氮化镓、氮化铝或氮化镓铝形成。复合基板满足关系式(1)、(2)及(3)。通过自蓝宝石基板侧对复合基板照射激光来分解蓝宝石基板与13族元素氮化物层的界面的晶格键。5.0≤(13族元素氮化物层的平均厚度(μm))/所述蓝宝石基板的直径(mm)≤10.0····(1)；0.1≤所述复合基板的翘曲量(mm)×(50/所述复合基板的直径(mm))2≤0.6····(2)；1.10≤所述13族元素氮化物层的厚度的最大值(μm)/所述13族元素氮化物层的厚度的最小值(μm)····(3)。
摘要（英）：

A composite substrate which is provided with a sapphire substrate and a group 13 element nitride layer provided on the sapphire substrate is prepared. The group 13 element nitride layer is formed of gallium nitride, aluminum nitride or gallium aluminum nitride. The composite substrate satisfies relational expressions (1), (2) and (3). By irradiating the composite substrate with laser light from the sapphire substrate side, crystal lattice bonds at the interface between the sapphire substrate and the group 13 element nitride layer are broken. 5.0 <= ((Average thickness ([mu]m) of group 13 element nitride layer)/(Diameter (mm) of sapphire substrate)) <= 10.0 (1) 0.1 <= (Warp (mm) of composite substrate)*(50/(Diameter (mm) of composite substrate))2 <= 0.6 (2) 1.10 <= (Maximum value of thickness ([mu]m) of group 13 element nitride layer)/(Minimum value of thickness ([mu]m) of group 13 element nitride layer) (3).

公开/授权文献
0/0