The invention relates to a power device with local metal service life control and a manufacturing method thereof. The power device comprises a substrate and a PN junction together formed by P+ areas formed on the substrate; an oxide layer grows on a substrate N- layer; the P+ area is internally provided with a deep energy level doping layer; diffusion of deep energy level impurities totally depends on temperature, and the temperature decides the diffusion speed and the solid solubility in silicon. When thermal diffusion is carried out on the deep energy level impurities, one-side annealing, such as, laser annealing is adopted, the laser annealing local temperature is distributed in an axial range of a chip, and thus, limited depth knot pushing for the deep energy level impurities can be realized. The technical scheme provided by the invention can realize local metal service life control.