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CN106504992B LDMOS器件及相关半导体集成电路的制造方法 有权

LDMOS器件及相关半导体集成电路的制造方法
摘要：
公开了LDMOS及相关半导体集成电路的制作方法。其中LDMOS器件形成于具有第一掺杂类型的半导体衬底中，该制作方法包括：采用第一掩膜向半导体衬底中注入一系列的杂质，以形成靠近半导体衬底表面且具有第二掺杂类型的第一区域、位于第一区域之下且具有第一掺杂类型的第二区域、以及位于第二区域之下且具有第二掺杂类型的第三区域；采用第二掩膜向半导体衬底中注入杂质，以形成与第一、第二和第三区域毗邻且具有第二掺杂类型的第四区域，其中该第四区域自半导体衬底的表面向下延伸至与第三区域相当的深度；以及采用第三掩膜向第一区域内注入杂质，以形成具有第一掺杂类型的第一阱。
摘要（英）：

A method for fabricating a LDMOS device in a semiconductor substrate of a first doping type, including: implanting a series of dopants into the semiconductor substrate using a first mask, and forming a first region of a second doping type adjacent to the surface of the semiconductor substrate, a second region of the first doping type located beneath the first region, and a third region of the second doping type located beneath the second region; implanting dopants into the semiconductor substrate using a second mask, and forming a fourth region of the second doping type adjacent to the first, second and third regions, wherein the fourth region extends from the surface of the semiconductor substrate to approximately the same depth as the third region; and implanting dopants into the first region using a third mask, and form a first well of the first doping type.

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