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CN105393337A 用于氧化硅、氮化硅、和多晶硅材料的化学机械抛光的组合物和方法 无效 - 驳回 复审申请

用于氧化硅、氮化硅、和多晶硅材料的化学机械抛光的组合物和方法
Abstract:
本发明提供用于抛光包括二氧化硅、氮化硅、和多晶硅的基材的化学机械抛光方法。该方法包括用CMP组合物研磨该基材的表面以从其移除至少一些二氧化硅、氮化硅、和多晶硅。该CMP组合物包括悬浮在具有3至9.5的pH且含有阳离子聚合物的含水载体中的粒状二氧化铈研磨剂；其中该阳离子聚合物由甲基丙烯酰氧烷基季铵聚合物组成。
Abstract(English):

The present invention provides a chemical mechanical polishing method for polishing a substrate comprising silicon dioxide, silicon nitride, and polysilicon. The method comprises abrading a surface of the substrate with a CMP composition to remove at least some silicon dioxide, silicon nitride and polysilicon therefrom. The CMP composition comprising a particulate ceria abrasive suspended in an aqueous carrier having a pH of about 3 to 9.5 and containing a cationic polymer; wherein the cationic polymer consists of a quaternary methacryloyloxyalkylammonium polymer.

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