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发明授权
CN105304632B 半导体结构及其制造方法 有权

半导体结构及其制造方法
摘要：
本发明的些实施例提供了种半导体结构,包括衬底和再生长区域。衬底由具有第晶格常数的第材料制成,并且再生长区域由第材料和第二材料制成,具有不同于第晶格常数的晶格常数。再生长区域部分地位于衬底中。再生长区域具有从衬底的表面处到再生长区域的最宽处的顶点处垂直测量的“尖端深度”,并且尖端深度小于10nm。再生长区域还包括基本由第材料制成的顶层,并且所述顶层基本具有第晶格常数。本发明还提供了种用于制造半导体结构的方法。
摘要（英）：

Some embodiments of the present disclosure provide a semiconductor structure, including a substrate and a regrowth region. The substrate is made of a first material with a first lattice constant, and the regrowth region is made of the first material and a second material, having a lattice constant different from the first lattice constant. The regrowth region is partially positioned in the substrate. The regrowth region has a “tip depth” measured vertically from a surface of the substrate to a widest vertex of the regrowth region, and the tip depth being less than 10 nm. The regrowth region further includes a top layer substantially made of the first material, and the top layer has substantially the first lattice constant.

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