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发明公开
CN105244290A 制造半导体器件的方法 有权

制造半导体器件的方法
摘要：
改进了在半导体器件内形成的编码的读取可靠性。根据一个实施例的制造半导体器件的方法包括在多个器件区域DVP内形成密封体的步骤，在布线衬底的器件区域DVP外部形成编码(第一标识信息)MK3。另外，根据一个实施例的半导体器件的制造方法包括在形成密封体MR之后，读取编码MK3，并且将另一编码(第二标识信息)附加到密封体MR的步骤。另外，在形成密封体的步骤之前，在形成编码MK3的标记区域MKR和器件区域DVP之间形成坝状物部分DM。
摘要（英）：

Reading reliability of a code formed in a semiconductor device is improved. A manufacturing method of semiconductor devices according to one embodiment includes a step of forming a sealing body MR in a plurality of device regions DVP with a code (first identification information) MK3 being formed outside the device regions DVP of a wiring substrate. Also, the manufacturing method of semiconductor devices according to one embodiment includes a step of, after forming the sealing body MR, reading the code MK3 and affixing another code (second identification information) to the sealing body MR. Further, before the step of forming the sealing body MR, a dam part DM is formed between a marking region MKR in which the code MK3 is formed and the device regions DVP.

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