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发明授权
CN105235343B 高介电常数低介电损耗聚偏氟乙烯基复合薄膜及制备方法 失效 - 权利终止

高介电常数低介电损耗聚偏氟乙烯基复合薄膜及制备方法
摘要：
本发明涉及一种高介电常数低介电损耗的聚偏氟乙烯基复合薄膜。近年来，高介电常数和低介电损耗的介电功能材料由于其在电子行业和能源储存方面的广泛应用而得到了巨大的关注。一种高介电常数低介电损耗的聚偏氟乙烯基复合薄膜，其组成包括：纯聚偏氟乙烯层（1）、掺杂氧化锌的聚偏氟乙烯层（2），其特征是：所述的纯聚偏氟乙烯层和所述的掺杂氧化锌的聚偏氟乙烯层垂直于铺膜方向间隔铺层布置。本发明应用于高介电常数低介电损耗的聚偏氟乙烯基复合薄膜。
摘要（英）：

The invention relates to a high-dielectric-constant low-dielectric-loss polyvinylidene fluoride-based composite film. Currently, dielectric functional materials with high dielectric constant and low dielectric loss attract great attention because of their wide application in the aspects of electronic industry and energy storage. The high-dielectric-constant low-dielectric-loss polyvinylidene fluoride-based composite film comprises pure polyvinylidene fluoride layers (1) and zinc oxide-doped polyvinylidene fluoride layers (2). The film is characterized in that the pure polyvinylidene fluoride layers and the zinc oxide-doped polyvinylidene fluoride layers are alternately laid in a direction perpendicular to a film laying direction. The method provided by the invention is applied to the high-dielectric-constant low-dielectric-loss polyvinylidene fluoride-based composite film.

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