Provided is a quantum dot LED with a dual photonic crystal structure, successively comprising a substrate 101, a hole injection layer 102, a reflection type photonic crystal 103 (i.e., a first photonic crystal) arranged on the hole injection layer 102, a hole transmission layer 104, a quantum dot active region 105, a deficit type photonic crystal 106 (i.e., a second photonic crystal) arranged on an electronic transmission layer 107, the electronic transmission layer 107, and an electron injection layer 108 from bottom to top. The beneficial effects are that the quantum dot LED can substantially increase LED light extraction efficiency, and finally favor the increase of LED luminescence power and brightness.