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发明公开
CN104952910A 超结半导体器件的终端结构及其制造方法 无效 - 驳回

超结半导体器件的终端结构及其制造方法
摘要：
本发明公开了一种超结半导体器件的终端结构及其制造方法。所述终端结构具有若干超结P柱，每个超结P柱包括一顶部P柱和一底部P柱，每个超结P柱中顶部P柱的宽度不小于底部P柱的宽度。本发明的超结半导体器件的终端结构及其制造方法，能够提供高可靠小尺寸的半导体器件终端结构，并具有成本低、工艺简单容易实现和工艺窗口宽的优点。
摘要（英）：

The invention discloses a terminal structure of a super-junction semiconductor device and a manufacturing method thereof. The terminal structure comprises a plurality of super-junction P-pillars; each super-junction P-pillar comprises a top P-pillar and a bottom P-pillar; the top P-pillar of each super-junction P-pillar is narrower than the bottom P-pillar thereof. The thermal structure and the manufacturing method thereof have the advantages that the terminal structure can be high in reliability and small in size, the cost is low, the process is simple and easy to implement and a process window is wide.

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