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发明公开
CN104900769A GaN基LED外延结构及其制作方法 失效 - 权利终止

GaN基LED外延结构及其制作方法
摘要：
本发明提供一种GaN基LED外延结构及其制作方法，所述外延结构包括依次层叠的成核层、未掺杂GaN层、高温N型GaN层、低温N型GaN层、多量子阱结构、AlGaN层、低温P型AlInGaN层、P型电子阻挡层及P型GaN层。采用所述低温N型GaN层取代传统LED外延结构中的超晶格结构，由于所述低温N型GaN层的生长温度较低，会使得所述低温N型GaN层内的C元素的含量较高，又所述低温N型GaN层不含In元素，这不仅可以有效地降低外延电压，还可以有效地改善LED器件的漏电和反向电压，进而提高LED芯片的品质。
摘要（英）：

The invention provides a GaN-based LED epitaxial structure and a making method thereof. The epitaxial structure comprises a nucleation layer, an undoped GaN layer, a high-temperature N-type GaN layer, a low-temperature N-type GaN layer, a multiple-quantum-well structure, an AlGaN layer, a low-temperature P-type AlInGaN layer, a P-type electron blocking layer, and a P-type GaN layer. The low-temperature N-type GaN layer is adopted to replace a superlattice structure in a traditional LED epitaxial structure. As the low-temperature N-type GaN layer grows at low temperature, the content of C element in the low-temperature N-type GaN layer is high. The low-temperature N-type GaN layer does not contain In element, so that the epitaxial voltage can be reduced effectively, the leakage current and reverse voltage of LED devices can be improved effectively, and the quality of LED chips can be improved.

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