The invention relates to the semiconductor technical field and provides a semiconductor device manufacturing method. The method comprises the step S101 of providing a wafer having a front device and a dielectric layer located on the front device. A metal layer is formed on the dielectric layer. An interlayer dielectric layer is further formed on the metal layer. The method further comprises the following steps of (S102) forming a mask layer for etching a contact hole on the interlayer dielectric layer and forming a contact hole in the interlayer dielectric layer through etching; (S103) etching wafer edges so as to remove the metal layer part located on the wafer edges; (S104) cleaning the contact hole through a wet method; (S105) and forming a contact hole bonding layer and a metal plug inside the contact hole. By adding the step of etching wafer edges so as to remove the metal layer part located on the wafer edges, the method can prevent metal layer peeling defects and contact hole bonding layer peeling defects on wafer edge areas. Therefore, the device yield rate can be improved.