The invention provides a PVD preparation process for adjusting TiW membrane stress. The preparation process comprises the following steps: placing a to-be-processed substrate on a base; inletting an argon gas in the first flow; depositing; applying the first power on a direct current power source and maintaining for a first preset time; cooling; stopping applying the first power on the direct current power source and maintaining for a second preset time; and repeating the depositing and cooling until the required film membrane thickness is achieved. Through the PVD preparation process for regulating TiW membrane stress, by setting the cooling step to regulate the stress of the TiW membrane in the preparation process, the stress of the film is adjusted by adjusting the first preset time for deposition and the second preset time for cooling; the stress of the prepared TiW membrane is controllable, the deposition rate and the density of the TiW membrane are maintained essentially constant, the stress requirement of the semiconductor integrated circuit device can be satisfied, the stability and the service life of the semiconductor integrated circuit are improved.